c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . w w w w f f f f p830b p830b p830b p830b rev.a feb .201 1 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? 5a,500v, r ds(on) (max1.6 ? )@v gs =10v ? ultra-low gate charge(typical 18nc) ? fast switching capability ? 100%avalanche tested ? maximum junction temperature range(150 ) general description this po w er mosfet is produced using winsemi s advanced planar stripe, dmos technolog y . this latest technology has been especial l y designed to minimi z e on-state resistance, have a high rugged avalanche characteristics. this devices is special l y w ell suited for high ef fi ciency s w itch model po w er supplies, po w er factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. absolute maximum ratings symbol parameter value units v dss drain source voltage 500 v i d continuous drain current(@tc=25 ) 5 a continuous drain current(@tc=100 ) 2.9 a i dm drain current pulsed (note1) 20 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note2) 300 mj e ar repetitive avalanche energy (note1) 7.3 mj dv/dt peak diode recovery dv /dt (note3) 4.5 v/ ns p d total power dissipation(@tc=25 ) 73 w derating factor above 25 0.58 w/ t j ,t stg junction and storage temperature -55~150 t l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 1.71 /w r qcs thermal resistance , c ase-to-sink - 0.5 - /w r qja thermal resistance , junction-to -ambient - - 62 .5 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p830b p830b p830b p830b 2 / 7 electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30v,v ds =0v - - 100 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 500 v,v gs =0v - - 1 a v ds =400v,tc=125 10 a drain -source breakdown voltage v (br)dss i d =250 a,v gs =0v 500 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25 - 0.5 - v/ gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 3 - 4 .5 v drain -source on resistance r ds(on) v gs =10v,i d = 2.5 a - 1.43 1.6 ? forward transconductance gfs v ds = 40 v,i d = 2.5 a - 5.2 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 480 625 pf reverse transfer capacitance c rss - 15 20 output capacitance c oss - 80 105 switching time rise time tr v dd = 250 v, i d = 5 a r g = 25 ? (note4,5) - 46 100 ns turn-on time ton - 12 35 fall time tf - 48 105 turn-off time toff - 50 110 total gate charge(gate-source plus gate-drain) qg v dd =4 00 v, v gs =10v, i d = 5 a (note 4 ,5) - 18 24 nc gate-source charge qgs - 2.2 - gate-drain("miller") charge qgd - 9.7 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 5 a pulse drain reverse current i drp - - - 20 a forward voltage(diode) v dsf i dr = 5 a,v gs =0v - - 1.4 v reverse recovery time trr i dr = 5 a,v gs =0v, di dr / dt =100 a / s - 263 - ns reverse recovery charge qrr - 1.9 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 21.5 m h i as = 5 a,v dd =50v,r g = 25 ? ,starting t j =25 3.i sd 5 a,di/dt 2 00a/us,v dd < bv dss ,starting t j =25 4.pulse test:pulse width 300us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p830b p830b p830b p830b 3 / 7 fig.1 on state characteristics fig.2 transfer characteristics fig.3 on-resistance variation vs drain current and gate voltage fig.4 body diode forward voltage variation with source current and temperature fig.5 capacitance characteristis fig.6 gate charge characteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p830b p830b p830b p830b 4 / 7 fig. 9 maximum safe operation area fig. 10 maximum drain current vs case temperature fig. 11 transient thermal response curve fig.7 breakdown voltage variation vs temperature fig.8 on-resistance variation vs.temperature
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p830b p830b p830b p830b 5 / 7 fig. 12 gate test circuit & waveform fig.1 3 resistive switching test circuit & waveform fig.1 4 unclamped inductive switching test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p830b p830b p830b p830b 6 / 7 fig.1 5 peak diode recovery dv/dt test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p830b p830b p830b p830b 7 / 7 to-220 to-220 to-220 to-220 package package package package dimension dimension dimension dimension unit:mm
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